- 产品详情
- 产品参数
Beam Intensity Monitor
Transmissive photodiode: DDS1- XXX/X
The DDS1 photodiode is used for diagnostic X-ray applications
P-on-N silicon detector
Two available square active area: 5x5 mm2 or 10x10 mm2
Thickness: 10 μm
Very high transmission in a wide range of energies
No external voltage is needed for operation
Dimensions: 41x68x12 mm3
Easily mounted in experiment
The beam intensity is measured by output current
Depletion layer thickness (bias = 0): 7 µm
General Features
DDS1 photodiode is based on a Silicon detector fabricated on a 10 μm thick substrate. Because of the low noise (dark current, in the pA range), very low radiation intensities can be measured reliably. Si photodiode has good responsivity uniformity and provides a good stability after burn-in.
Specifications (electro-optical characteristics at 25ºC)
Model No. | Active area (mm2) | BreakdownVoltage(1)(V) | DarkCurrent(2) (pA) | CapacitanceC(2) (nF) | ShuntResistance (MΩ) | SensitivityS(3) (A/W) | Max storage Te(oC) |
AS04-110A 10x10mm2 | 68.9 | 16.7 | 1.20 | 0.275 | 230 | 0.035 | 80 |
AS04-105A 5x5mm2 | 28.1 | 14.6 | 0.13 | 0.123 | 420 |
(1): 1 µAReverse current, (2): measured at 0V, (3): measured at 8 keV
Experimental results
Wide energy range. Transmission level above 80% at 8 keV and 94% at 12 keV.
Responsivity uniformity better than 5% inside the active area.
Drawing - packaging
printed circuit board A-anode, C-cathode
5x5 mm2 and 10x10 mm2 Si photodiode | Accessory P1 (optional)
Optional packaging Two Lemo connected(ERN.00.250.GTL) Actived area limited to 50.25 mm2 Two interchangeable kapton windows | ||||||||||||||||
Nomenclature The photodiodes follow the below nomenclature. All part numbers start with:
| Typical applications Diagnostic X-ray applications and real-time X-ray beam position monitor for synchroton beamlines Application circuit:
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Further information
