Beam Intensity Monitor
Transmissive photodiode: DDS1- XXX/X
The DDS1 photodiode is used for diagnostic X-ray applications
P-on-N silicon detector
Two available square active area: 5x5 mm2 or 10x10 mm2
Thickness: 10 μm
Very high transmission in a wide range of energies
No external voltage is needed for operation
Dimensions: 41x68x12 mm3
Easily mounted in experiment
The beam intensity is measured by output current
Depletion layer thickness (bias = 0): 7 µm
DDS1 photodiode is based on a Silicon detector fabricated on a 10 μm thick substrate. Because of the low noise (dark current, in the pA range), very low radiation intensities can be measured reliably. Si photodiode has good responsivity uniformity and provides a good stability after burn-in.
Specifications (electro-optical characteristics at 25ºC)
Max storage Te(oC)
(1): 1 µAReverse current, (2): measured at 0V, (3): measured at 8 keV
Wide energy range. Transmission level above 80% at 8 keV and 94% at 12 keV.
Responsivity uniformity better than 5% inside the active area.
Drawing - packaging
printed circuit board
5x5 mm2 and 10x10 mm2 Si photodiode
Accessory P1 (optional)
Two Lemo connected(ERN.00.250.GTL)
Actived area limited to 50.25 mm2
Two interchangeable kapton windows
The photodiodes follow the below nomenclature.
All part numbers start with:
Diagnostic X-ray applications and real-time X-ray beam position monitor for synchroton beamlines